12S Pre-Charge Controller Module
- 1 Description
- 2 Requirements
- 3 System Background/Research
- 3.1 Pre-charge circuits
- 3.2 CAN (and MCU)
- 3.3 Current sense
- 4 System Design
- 4.1 System Block Diagram
- 4.2 Component Selection
- 4.2.1 STM32 Power Component Selection
- 4.2.1.1 BUCK
- 4.2.1.1.1 Buck Component Selection
- 4.2.1.2 LDO
- 4.2.1.1 BUCK
- 4.2.2 Pre-Charge IC Related Component Selection
- 4.2.2.1 Current Sense Resistor
- 4.2.2.2 R_SET
- 4.2.2.3 R_IWRN (Overcurrent protection threshold)
- 4.2.2.4 R_ISCP (Short-circuit protection threshold)
- 4.2.2.5 C_TMR (Fault timer period)
- 4.2.2.6 Main MOSFET (Q1 and Q2)
- 4.2.2.7 Pre-charge FET (Q3) and Pre-charge Resistor
- 4.2.2.8 C_BST Bootstrap Capacitor
- 4.2.2.9 IMON Resistor
- 4.2.2.10 EN/UVLO Set
- 4.2.1 STM32 Power Component Selection
Description
12S pre-charge controller module for controlled start-up / shut-down behavior of entire system power distribution network.
Engineer: @Robert Tang
Supervisor: @Kevin Li
Requirements
12S rated
Pre-charge/discharge circuit for controlled on/off behavior of entire power distribution network
Battery voltage / current sense ?
12S
100A pulse current / 60A continuous current
Dedicated MCU
CAN interface
System Background/Research
Pre-charge circuits
Why it is needed?
Without the pre-charge circuit, when connecting a high voltage source to the load, which can be modelled as a capacitor, there will be a large potential difference, and this will cause inrush currents that can damage the components. When the pre-charge circuit is used, the load capacitance can be safely charged up, and then the switch can be closed.
Reference documents
Why Pre-Charge Circuits Are Necessary in High Voltage Systems
High-Voltage Solid-State Relay Active Precharge Reference Design Reference design for this TPSI3050-Q1
Managing Inrush Current Not the exact same as pre-charge, but gives an general idea of managing in-rush current, and some of the methods in the doc are relevant to the pre-charge circuit (integrated load switches)
Designing a BCM® Pre-Charge Circuit
Pre-Charge Circuits for Lithium-Ion Battery Packs
FSAE/Precharge/Precharge at master · michaelruppe/FSAE Pre-charge circuit for tractive system
Pre-charge Component Selection
Search on DigiKey for: high-side FET driver, not looking for driver with internal FET (can reflect by no R_ds_on in the spec)
IC & Link | Type |
|
---|---|---|
High Side NMOS Driver | The similar IC (4810) that was used in 12V->5V @ 5A Buck (without pre-charge, 48111 is with pre-charge) 3.5V to 80V input | |
Isolated Switch Driver | Might be overkill for our application | |
Current Controller | Is a bit different, does not mention pre-charge directly, but have in-rush current protection and have helped decrease dv/dt | |
High side NMOS Driver | *With PMOS pre-charge FET driver function | |
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CAN (and MCU)
Resources:
CAN - Controller Area Network (EFS team)
The CAN circuit and the MCU will be copied from Meghan’s ESC CAN Adapter, the selected STM32 MCU is STM32L431KCU6.
The STM32 will require external 3.3V and 5V input to power it on, this can be done by placing a Buck (convert 12S voltage to 5V) and then a 5V to 3.3V LDO, this will help reduce noise.
Current sense
Some pre-charge FET driver IC, such as the TPS48111 chip, has integrated current sensing feature, however I need to do calculations to validate the feasibility of the feature.
If the internal current sensor does not work, an external current sensing circuit is needed
System Design
System Block Diagram
Component Selection
STM32 Power Component Selection
BUCK
Requirement: 12S battery to 5V, the required current is determined by adding up all currents; >50V input; simple architecture (does not require additional features) Look for DC to DC switching regulator
All of the load current consumed by the BUCK output, and accounting for ripples is around 1A.
Selection Table:
Model Number | Input Voltage | Current Output | Price (1pc) | Misc. Pros/cons |
---|---|---|---|---|
https://www.digikey.ca/en/products/detail/texas-instruments/LMR51610XDBVR/22106815 | 4V-65V | 1A | 2.02 |
Also have 0.6A option available |
https://www.digikey.ca/en/products/detail/texas-instruments/LMR38010FDDAR/18158633 | 4.2V-80V | 1A | 3.59 | More expensive and more pins |
https://www.digikey.ca/en/products/detail/texas-instruments/LMR36520ADDAR/11617624 | 4.2V-65V | 2A | 3.73 | Prob. don’t need this much current |
Buck Component Selection
Output voltage set:
The output voltage is set to 6.1V to account for DCR losses
Inductor selection:
12S Pre-charge Inductor Link to Desmos calculation
Since the current is small (less than 1A), the DCR of the inductor will not matter that much, the selected inductor has a DCR of 310mOhm.
Finally selected inductor: https://www.digikey.ca/en/products/detail/bourns-inc/SRP7050TA-470M/5429688
Capacitors:
All needed capacitors are selected from the WARG component library
LDO
The LDO is selected from 6S Servo Module, converting 6V output from the BUCK to 5V and then to 3.3V using two cascading LDOs.
Pre-Charge IC Related Component Selection
Current Sense Resistor
R_SNS from the calculation above is calculated 0.0002Ohms
Resistor | Power | Tolerance | Temp@2W | Price | Size |
---|---|---|---|---|---|
https://www.digikey.ca/en/products/detail/yageo/PU3921FKNP50U2L/9696366 | 5W | 1% | N.A | 2.63 | 10.00mm x 5.20mm |
6W | 1% |
| 1.16 | 6.35mm x 3.02mm | |
https://www.digikey.ca/en/products/detail/vishay-dale/WSLP3921L2000FEA/5215909 | 9W | 15 |
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Selected: WSLP3921L2000FEA
R_SET
100Ohm, 1% found from the library
R_IWRN (Overcurrent protection threshold)
The I_OC (Overcurrent threshold) is set to be 120A, (1.2*I_Max)
R_ISCP (Short-circuit protection threshold)
The I_SC (Short-circuit threshold) is set to be 144A, (1.2*I_OC)
C_TMR (Fault timer period)
Main MOSFET (Q1 and Q2)
2 options: First one is to use two large FETs in parallel, second option is to use 3 smaller FETs in parallel. Finally selected to go with 2 in parallel, since the ones that I have found on DigiKey has lower R_DSON and similar price, and better performance than the small FETs
REQUIREMENTS:
Max V_GS the TPS chip can drive is 13V, so select FET with V_GS larger than 15V
V_DS at least 60V (something with 80V should be optimal)
Expected wattage is 2.5W-3.5W (calculated by 150/thermal resistance of junction to ambient)
Choose R_DSON around 1mOhm is best
FET | Price | R_DSON | V_GS | V_DS | I_D | Other |
STL220N6F7 https://www.digikey.ca/en/products/detail/stmicroelectronics/STL220N6F7/5308051 | 5.64 | 1.4mOhm | 20V | 60V | 120A | Low V_DS, may not be enough 7W Option1 |
IAUS300N08S5N012ATMA1 | 8.99 | 1.2mOhm | 20V | 80V | 300A | The TPS datasheet used the same kind of chip, also it's Infineon :( |
XPQR8308QB,LXHQ | 8.71 | 0.83mOhm | 20V | 80V | 350A | Lower power consumption, Kevin doesn't like Toshiba :( |
NVBLS0D8N08XTXG https://www.digikey.ca/en/products/detail/onsemi/NVBLS0D8N08XTXG/22285398 | 10.44 | 0.79mOhm | 20V | 80V | 457A | Pretty good overall, selected |
Final Selected: NVBLS0D8N08XTXG
Pre-charge FET (Q3) and Pre-charge Resistor
Requirements: 1. Handle I_INRUSH; 2. Voltage rating is the same for other FETs (V_DS); 3. V_GS is the same as well, since they are all powered by the charge pump.
The pre-charge FET and pre-charge resistor will be connected in parallel with the main FETs
The I_INRUSH is set to be 0.5A (500mA)
R_PRECHARGE=V_IN/I_INRUSH=48V/0.5A=96Ohms
Selected 2 110 Ohm resistors in parallel to account for power dissipation
https://www.digikey.ca/en/products/detail/vishay-dale/CRCW2512220RJNEGHP/2222118 , 2512 sized
FET | Price | R_DSON | V_GS | V_DS | I_D | Other |
AOSS62934 https://www.digikey.ca/en/products/detail/alpha-omega-semiconductor-inc/AOSS62934/9974900 | 0.63 | 140mOhm | 20 | 100 | 2A | Gate charge=3.8nC |
C_BST Bootstrap Capacitor
Rated 25V+
IMON Resistor
EN/UVLO Set